2N2955HV transistor equivalent, silicon pnp power transistor.
*Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAME.
*Excellent Safe Operating Area
*DC Current Gain-
: hFE=20-70@IC= -4A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1V(Max)@ IC= -4A
*Complement to Type 2N3055HV
APPLICATIONS
*Designed for general-purpose switching and amp.
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